Growth and some properties of InxGa1−xN thin films by reactive evaporation
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URI
Click to copy the URI to your clipboard.https://resolver.scholarsportal.info/resolve/00406090/v261i1-2/87_gaspoitfbre.xml
DOI
Click to copy the URI to your clipboard.https://doi.org/10.1016/0040-6090(95)06529-6
Abstract
InxGa1−xN thin films mainly having large InN molar fractions are grown on α-Al2O3 (0001) and GaAs (111) B substrates by reactive evaporation, and some properties of them are investigated. C-axis oriented InxGa1−xN films are similarly obtained on each substrate; however, their crystallinity deteriorates with increasing GaN molar fractions. Band gap energies of these films are also measured and the bowing parameter is estimated.